Ferroelectric and dielectric properties of 0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 thin films on La0.6Sr0.4CoO3 buffered Si substrates

0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 (0.62PMN–0.38PT) thin films were deposited on La0.6Sr0.4CoO3 (LSCO) buffered Si substrates by radio-frequency magnetron sputtering. It has been found that the 0.62PMN–0.38PT films show a (1 0 0) preferred oriented perovskite phase on (1 0 0) preferred oriented LSCO layer while they show a (1 1 0) preferred perovskite phase on (1 1 0) preferred oriented LSCO layer. The formations of such preferred orientations are attributed to co-contribution of the surface energy and lattice-match interface energy. The (1 1 0) preferred oriented 0.62PMN–0.38PT film exhibits a relatively low remnant polarization of 12.1 μC/cm2 while a low coercive field of 27 kV/cm compared with (1 0 0) preferred oriented one (13.9 μC/cm2, 56 kV/cm). Moreover, the (1 1 0) preferred oriented film shows a larger dielectric constant of ∼2260 and a lower dielectric loss of 0.09 at 1 kHz than those of (1 0 0) preferred oriented one (1050 and 0.19). The results demonstrate that the enhanced ferroelectric and dielectric properties are achieved for (1 1 0) preferred oriented film, which is correlated with large anisotropy in the texture films induced by LSCO buffer layers.

► Prepared highly preferred oriented 0.62PMN–0.38PT thin films on La0.6Sr0.4CoO3. ► Reported the anisotropy of ferroelectric and dielectric properties of the films. ► Enhanced electrical properties are achieved in the (1 1 0) preferred oriented film. ► The film exhibits a high Pr of 12.1 μC/cm2, a low Ec of 27 kV/cm. ► The film shows a high dielectric constant of 2260 at 1 kHz.