Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1616428 | Journal of Alloys and Compounds | 2012 | 6 Pages |
Abstract
⺠Ir/n-Ge (1 0 0) Schottky diodes were characterized using I-V, C-V and SEM techniques under various annealing conditions. ⺠The variation of the electrical and structural properties can be due to effects phase transformation during annealing. ⺠Thermal stability of these diodes is maintained up to 500 °C anneal. ⺠SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
A. Chawanda, S.M.M. Coelho, F.D. Auret, W. Mtangi, C. Nyamhere, J.M. Nel, M. Diale,