Article ID Journal Published Year Pages File Type
1616428 Journal of Alloys and Compounds 2012 6 Pages PDF
Abstract
► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I-V, C-V and SEM techniques under various annealing conditions. ► The variation of the electrical and structural properties can be due to effects phase transformation during annealing. ► Thermal stability of these diodes is maintained up to 500 °C anneal. ► SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C.
Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
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