Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1616570 | Journal of Alloys and Compounds | 2012 | 8 Pages |
Abstract
⺠The structure of Ag2ZnSiS4 is solved and refined in the space group Pn using single crystal X-ray diffraction. ⺠Electronic band structure calculations show that Ag2ZnSiS4 is a direct band gap semiconductor with a calculated band gap of 1.88 eV. ⺠The optical band gap of Ag2ZnSiS4 was experimentally determined as 3.28 eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Carl D. Brunetta, Balamurugan Karuppannan, Kimberly A. Rosmus, Jennifer A. Aitken,