Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor–accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

► This study grew GaN epilayers on Si(1 1 1) substrate by molecular beam epitaxy with CrN interlayer fabricated through nitridation process. ► The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN prevented Si atoms diffusing into the GaN epilayer, thereby reducing the concentration of electrons. ► Photoluminescence spectra indicated that DAP emission was not generated in the GaN with a CrN interlayer, due to improved crystalline quality, and a reduction in the concentration of electrons.