| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1616746 | Journal of Alloys and Compounds | 2011 | 5 Pages |
Abstract
⺠In this study, we deposited Bi2Zn2/3Nb4/3O7 thin films at room temperature by pulsed laser deposition. ⺠Dielectric constant and loss tangent of the films post-annealed at 150 °C are 57 and 0.005 at 10 kHz. ⺠High resolution TEM results show that nanocrystallites exist in the amorphous film. ⺠The film exhibits excellent leakage current characteristics with low leakage current density. ⺠Bi2Zn2/3Nb4/3O7 thin films are potential materials for embedded capacitor applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Xiaohua Zhang, Wei Ren, Peng Shi, M. Saeed Khan, Xiaofeng Chen, Xiaoqing Wu, Xi Yao,