Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1616772 | Journal of Alloys and Compounds | 2011 | 4 Pages |
The electronic structure and linear optical property of BaSi2N2O2 (BSNO) have been calculated by density functional method with the local density approximation. A direct band gap of 5.17 eV at G is obtained for BSNO. The calculated total and partial densities of states indicate that the top valence band is mainly constructed from the N 2p and O 2p states, the low conduction band mostly originates from Ba 4d and Si 3p states. The calculated linear optical property of BSNO is in good agreement with the experimental measurement.
► A direct band gap of 5.17 eV at G is obtained for BSNO. ► The valence band is constructed from N 2p and O 2p states and the conduction band from Ba 4d and Si 3p states. ► The covalence of N–O bond is much strong in BSNO. ► The absorption edge of BSNO is located at about 240 nm.