| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1616928 | Journal of Alloys and Compounds | 2011 | 4 Pages |
Lead-free K0.4Na0.6Nb1−xVxO3 thin films were prepared by chemical solution deposition method. The effects of V doping on the phase composition and electrical properties of the films were studied at room temperature. The results indicate that the films are composed of orthorhombic and tetragonal phases, and the phase composition is affected by V content. It is also found that the ferroelectric and dielectric properties are improved by V doping (2Prmax = 35.5 μC/cm, ɛmax = 1189). The enhanced electrical properties are attributed to the more T-phase content and better quality of K0.4Na0.6Nb1−xVxO3 (x = 0.015) film.
► V doping is introduced. ► V doping can modify the quality and the electrical properties of the KNN film. ► The phase composition of the films is affected by V doping. ► KNNV0.015 film with maximal T-phase content gains the best electrical properties.
