| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1617296 | Journal of Alloys and Compounds | 2011 | 8 Pages |
Abstract
⺠Structure identification of Se85Te15âxSbx (x = 0, 4 and 6 at.wt%) films are carried out. ⺠The switching phenomenon of a-Se85Te15âxSbx (x = 0, 4 and 6at.wt%) in thin film form of different thicknesses ranging from (167.5-630 nm). ⺠The current-voltage (I-V) characteristics at different temperature. ⺠The conduction activation energy, the threshold switching voltage and the threshold activation energy were calculated. ⺠The electrothermal model support the switching mechanism in the investigated compositions.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
M. Fadel, N.A. Hegab, I.S. Yahia, A.M. Salem, A.S. Farid,