Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering

A Molybdenum Schottky diode on unintentially doped p-GaTe was fabricated using DC sputtering. I–V characteristics of the fabricated diode were measured as a function of temperature at the range of 50–300 K. The barrier parameters of Mo/p-GaTe are interpreted using thermionic emission theory and inhomogeneities observed in the barrier are characterized with Gaussian distribution approach on the basis of parallel conduction model. The barrier height and the ideality factor values at 300 K and at 80 K of Mo/p-GaTe were calculated to be 0.581 eV, 1.097 and 0.472 eV, 1.349, respectively. The barrier parameters changed resolutely at 140–300 K temperature range and a strong temperature dependence was observed below 130 K. The weighting coefficients, standard deviations and mean barrier heights were calculated for sub distributions. Richardson plot was interpreted with a new approach and Richardson constant was found to be 117.96 AK−2 cm−2 for p-GaTe.

► We interpret on basis of a multi-Gaussian distribution model barrier inhomogeneities observed naturally in a Schottky barrier. ► We fabricated a Mo/p-GaTe in optimum conditions using sputtering method. ► We improve distinct barrier distributions consideration to explain barrier anomalies. ► In works are observed a problem to obtain Richardson constant in a modified Richardson plot having separate barrier distributions. ► This problem may be overcome with our new approach.