| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1617715 | Journal of Alloys and Compounds | 2011 | 5 Pages |
The influence of GaCl carrier gas flow rate on GaN films grown by hydride vapor-phase epitaxy (HVPE) was investigated. The symmetric (0 0 0 2) and asymmetric (10–12) ω scans were detected to estimate the quality of GaN films. Optical properties were studied by room temperature photoluminescence spectra. Raman spectroscopy was employed to analyze the residual stress in the samples. The surface morphology of the GaN films was investigated by atomic force microscopy (AFM). On the basis of process optimization the optimal GaCl carrier gas flow rate for growth of high quality GaN films in our system was obtained as 1.3 L/min.
► GaN films were grown by hydride vapor-phase epitaxy on c-plane sapphire. ► Wide-range variation of GaCl carrier gas flow rates was used. ► The GaN films were characterized to optimize the GaCl carrier gas flow condition. ► The best crystal quality and other properties were obtained at 1.3 L/min GaCl carrier gas flow rate.
