Preparation and characterisation of PZT films by RF-magnetron sputtering

Stoichiometric films were prepared by rf-magnetron sputtering from a Pb(Zr0.54Ti0.46)O3 ceramic target onto Au-electroded substrates of alumina. During deposition the substrate holder was kept at a temperature of 300 °C. Post-deposition heat treatment in air at 650 °C was carried to promote the full crystallization and to result in pure perovskite PZT phase. SEM–EDX measurements for the films were performed both on surface and on cross-section. The impedance spectroscopy data demonstrates that the films have rather good dielectric properties and low losses. The recorded P–E loops prove their macroscopic ferroelectric characteristics, while piezoresponse force microscopy experiments confirm a nanoscale switching mechanism based on domain nucleation-growth.

► Stoichiometric Pb(Zr0.54Ti0.46)O3 thin films of 440 nm thickness were deposited by rf-sputtering from ceramic target onto Au-electroded substrates of Al2O3. ► The macroscopic P(E) loops indicate the ferroelectric nature of the rf-sputtered films. ► Local PFM investigation confirmed the ferroelectric nature of the PZT/Au/Al2O3 films, with proper control of nanoscale domain orientation by external electric fields with various intensities and orientations. ► The crystalline films have promising properties: permittivity of 125–210 and losses below 10% at low frequency.