| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1617853 | Journal of Alloys and Compounds | 2010 | 4 Pages |
AgInS2 sprayed thin films have been deposited on glass SnO2:F substrates using an aqueous solution which contains silver acetate (AgCH3CO2), thiourea (SC(NH2)2) and indium chloride (InCl3) as precursors. The depositions were carried out at the substrate temperature of 420 °C. The concentration ratio in the spray solution of indium and silver elements x = [Ag+]/[In3+] was equal to 1.3 whereas y = [S2−]/[In3+] was varied between 5 and 7. The current–voltage study of SnO2:F/AgInS2/Al Shottky diodes as a function of y composition has been carried out. A rectifier effect has been shown and the transport process is mainly governed by the generation-recombination and tunneling effects.
Research highlights▶ Silver indium disulfide AgInS2 which belongs to I–II–VI2 ternary compounds is an attractive material in possible photovoltaic and optoelectronic applications because of its large absorption coefficient and its band gap energy lying in 1.87–2.03 eV domain. ▶ In this work, we report the I(V) characteristics of SnO2:F/AgInS2/Al diodes in which the silver indium disulfide thin films have been obtained by the spray pyrolysis technique using different concentration of sulfur in the starting solution. ▶ The double exponential physical parameters of AgInS2/Al junction have been extracted using Matlab software by simulating the I(V) characteristics. ▶ To date, the I(V) study of such diodes based on p type AgInS2 ternary semiconductor has not been tested.
