Optical and electrical properties of zinc oxide thin films with low resistivity via Li–N dual-acceptor doping

Zinc oxide thin films with low resistivity have been deposited on glass substrates by Li–N dual-acceptor doping method via a modified successive ionic layer adsorption and reaction process. The thin films were systematically characterized via scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, ultraviolet-visible spectrophotometry and fluorescence spectrophotometry. The resistivity of zinc oxide film was found to be 1.04 Ω cm with a Hall mobility of 0.749 cm2 V−1 s−1 and carrier concentration of 8.02 × 1018 cm−3. The Li–N dual-acceptor doped zinc oxide films showed good crystallinity with prior c-axis orientation, and high transmittance of about 80% in visible range. Moreover, the effects of Li doping level and other parameters on crystallinity, electrical and ultraviolet emission of zinc oxide films were investigated.

► Zinc oxide films have been deposited on glass substrates by Li–N dual-acceptor doping method via a modified SILAR method. ► The resistivity of ZnO film was found to be 1.04 Ω cm with a Hall mobility of 0.749 cm2 V−1 s−1, carrier concentration of 8.02 × 1018 cm−3, and transmittance of about 80% in visible range showing good crystallinity with prior c-axis orientation. ► A shallow acceptor level of 91 meV is identified from free-to-neutral-acceptor transitions. ► Another deep level of 255 meV was ascribed to LiZn-Lii complex.