Multiferroic behavior and electrical conduction of BiFeO3 thin film deposited on quartz substrate

Multiferroic BiFeO3 thin films were deposited on SrRuO3-buffered quartz substrates by off-axis radio frequency magnetron sputtering. The BiFeO3 thin film exhibits the desired multiferroic behavior (2Pr ∼ 97.41 μC/cm2 and 2Ms ∼ 10.3 emu/cm3). On the basis of the temperature- and frequency-dependent impedance studies, oxygen vacancies are shown to be responsible for the dielectric relaxation and conduction in the BiFeO3 thin film, where the scaling behavior of imaginary part of the electric modulus suggests that the relaxation mechanism does not change over the temperature range investigated.