Article ID Journal Published Year Pages File Type
1618199 Journal of Alloys and Compounds 2010 5 Pages PDF
Abstract

Cracks developed by tensile loading in the Si thin film deposited on the Ti–50.3Ni (at%) substrate were closed by the shape memory effect of the substrate. The interfacial layer formed after annealing at 873 K between the Si thin film and the substrate was essential for the shape memory effect-induced crack closure. Cracks which formed during lithiation in the Si thin film annealed at 873 K after deposition were closed by delithiation followed by heating up to 373 K.

Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
Authors
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