Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1618199 | Journal of Alloys and Compounds | 2010 | 5 Pages |
Abstract
Cracks developed by tensile loading in the Si thin film deposited on the Ti–50.3Ni (at%) substrate were closed by the shape memory effect of the substrate. The interfacial layer formed after annealing at 873 K between the Si thin film and the substrate was essential for the shape memory effect-induced crack closure. Cracks which formed during lithiation in the Si thin film annealed at 873 K after deposition were closed by delithiation followed by heating up to 373 K.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Gyu-bong Cho, Bo-min Kim, Hee-jin Choi, Jung-pil Noh, Si-young Choi, Hyo-jun Ahn, Shuichi Miyazaki, Tae-hyun Nam,