| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1618441 | Journal of Alloys and Compounds | 2011 | 6 Pages |
Abstract
⺠Our work is based on the fabrication and characterization of nanostructure ZnGa2Se4/n-Si thin film for the first time. ⺠The dark I-V characteristics of the heterojunction diode at various temperatures have been investigated to determine the electronic conduction mechanism parameters of this diode.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
I.S. Yahia, M. Fadel, G.B. Sakr, F. Yakuphanoglu, S.S. Shenouda, W.A. Farooq,