| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1618444 | Journal of Alloys and Compounds | 2011 | 6 Pages |
To increase the adhesion of diamond films and avoid the negative effects of using cobalt, previous treatments have employed tungsten particles to cover the surface of the 6 wt.% cobalt-cemented tungsten carbide (WC-Co) substrate. The surface of the tungsten particles is transformed into W2C and WC, which attracts and traps carbon. Through the process of nucleation, the carbon forms around the tungsten particles, thereby satisfying the conditions necessary for the formation of diamond film. Using Raman spectroscopy, we determined that diamond films of good quality with excellent adhesive properties and a hardness level as high as 27.78 GPa could be produced following pretreatment with 2.0 μm tungsten particles. Rockwell indentation tests indicate that addition of tungsten particles promotes the interfacial adhesion of diamond films with WC-Co substrates. We determined that using smaller tungsten particles decreased the number of gaps and cavities on the surface of the substrate, thereby enhancing the adhesion of the diamond film.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideResearch highlights► Larger particles of tungsten led to larger diamond particles with improved crystallinity, covering the specimen with increased speed. ► Adhesion was indicated to be a function of the gaps between the tungsten particles. ► Diamond films pretreated with tungsten particles of 2.0 μm showed the highest hardness of 27.78 GPa with good crystalline.
