Mechanical stability of Si thin film deposited on a Ti-50.3Ni(at%) alloy

Silicon thin film annealed at 973 K for 7.2 ks after being deposited on a Ti-50.3Ni(at%) substrate was not detached from the substrate after 2.2% tensile deformation, which was ascribed to a diffusion bonding between the Si film and substrate. The B2-B19′ transformation start temperature (Ms) of the Ti-Ni substrate with Si thin film increased by annealing, which was ascribed to a tensile stress developed by the difference in thermal expansion coefficient between the Si film and substrate.