Thermal effect of TiC in the Mo/TiC/SiC system at elevated temperature

In this study, we examined the effect induced by the addition of a TiC interlayer on the stability of the Mo/SiC system at high temperature. Indeed, Mo/SiC couple is unstable at high temperature with formation of Mo2C and Mo5Si3Cx phases. In order to limit the degradation of Mo mechanical properties, a TiC film was inserted between Mo and SiC. Samples used in this work were prepared on metallic wires substrates, SiC and TiC being deposited by CVD. The protection given by TiC layer was considered in the 1473-1673 K temperature range and for TiC thicknesses up to about 60 μm. From our results, TiC is not effective enough to mitigate C and Si atoms diffusion. Nevertheless, a notable reduction of the reaction extent is obtained at any temperatures. The so-observed effect depends on the TiC thickness and the temperature. In actual fact, TiC efficiency increases when temperature and/or TiC layer thickness increases without reaching a complete protection.