| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1619159 | Journal of Alloys and Compounds | 2011 | 5 Pages |
In this paper, we report on the structure and electrical properties of lead zirconate (PbZrO3) thin films doped with barium (Ba2+) and strontium (Sr2+) deposited on platinum-buffered silicon substrates by a sol–gel method. Effects of Ba2+ and Sr2+ dopants on microstructure and electrical properties of the PbZrO3 antiferroelectric thin films were investigated in details. X-ray diffraction patterns and scanning electron microscope micrographs illustrated that orientation and surface microstructure of these antiferroelectric films were dopant-dependent. The dielectric measurements showed that Sr2+ doping stabilized the antiferroelectric phase, while Ba2+ doping destabilized the antiferroelectric phase. It was also found that fatigue property of the antiferroelectric PbZrO3 thin films was improved remarkably by the dopants.
Research highlights▶ The structure and electrical properties of lead zirconate (PbZrO3) thin films could be tailored by barium (Ba2+) and strontium (Sr2+) doping. ▶ Sr2+ doping stabilized the antiferroelectric phase, while Ba2+ doping destabilized the antiferroelectric phase. ▶ The fatigue property of the antiferroelectric PbZrO3 thin films was improved remarkably by Ba2+ and Sr2+ dopants.
