Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure

▶ The level of oxygen vacancies significantly decreases with increasing Ar gas pressure. ▶ The number of oxygen vacancies decreases, and the number of oxygen atom in the lattice increases. ▶ The lattice scattering increases and the mobility is reduced by the increased lattice scattering. ▶ Finally, the reduced mobility increases the resistivity of the AZO thin films. ▶ The mobility plays a major role in the conduction behavior of AZO thin films deposited at room temperature.