Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1619185 | Journal of Alloys and Compounds | 2011 | 5 Pages |
Abstract
ⶠThe level of oxygen vacancies significantly decreases with increasing Ar gas pressure. ⶠThe number of oxygen vacancies decreases, and the number of oxygen atom in the lattice increases. ⶠThe lattice scattering increases and the mobility is reduced by the increased lattice scattering. ⶠFinally, the reduced mobility increases the resistivity of the AZO thin films. ⶠThe mobility plays a major role in the conduction behavior of AZO thin films deposited at room temperature.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Deok Kyu Kim, Hong Bae Kim,