Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels

The optically transparent conducting molybdenum-doped indium oxide thin films (In2O3:Mo) were prepared on glass substrates by an activated reactive evaporation method and the influence of molybdenum doping levels on the electrical and optical properties of the films had been investigated systematically. The films, synthesized at a substrate temperature of 573 K and a Mo-doping level of 3 at.%, exhibited a minimum electrical resistivity of 5.2 × 10−4 Ω cm and an average optical transmittance of 90% in the visible region with a band gap of 3.68 eV.