| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1619405 | Journal of Alloys and Compounds | 2010 | 4 Pages |
Abstract
An alternative approach of adjusting the Ge content in μc-SiGe:H films is explored by changing the H2/Ar flow rate ratio. The results reveal that the Ge content and film deposition rate both decrease with the increasing flow rate ratio of H2/Ar. Optical constants of the films are obtained by simulating the optical transmission spectrum using a modified envelope method. The dark conductivity and activation energy are investigated by measuring the temperature-dependent conductivity. The dependence of Ge content, deposition rate and optoelectronic properties on flow rate ratio of H2/Ar is discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Zeguo Tang, Wenbin Wang, Desheng Wang, Dequan Liu, Qiming Liu, Deyan He,