| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1619684 | Journal of Alloys and Compounds | 2010 | 5 Pages |
Abstract
This paper focuses on the piezoresponse characteristics at room temperature in niobium modified bismuth ferrite thin films (BFN) deposited on Pt/TiO2/SiO2/Si (1 0 0) substrates by the soft chemical method. The obtained films were grown at a temperature of 500 °C. The Nb dopant is effective in improving electrical properties of BFO films. XPS results show a single-phase Nb-doped BFO thin films with a Fe3+ valence state. It was found that Nb-doped BFO thin films exhibited good electrical properties, such as improved capacitance–voltage and high piezoeletric coefficient, indicating a promising material for use in future memories based on magnetic ferroelectrics.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
A.Z. Simões, Filiberto Gonzalez Garcia, C.S. Riccardi,