| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1620308 | Journal of Alloys and Compounds | 2010 | 4 Pages |
Abstract
Polycrystalline samples of β-Zn4Sb3 doped with bismuth have been fabricated through vacuum melting followed by hot-pressing method. The thermoelectric properties of Bi-doped compounds Zn4Sb3−xBix (x = 0, 0.02, 0.04, 0.06) were investigated in the temperature range of 323–673 K. All the specimens exhibited the behavior of p-type conduction. The thermoelectric figure of merit (ZT) was increased with the increase of Bi content. The maximum ZT value of 1.09 was obtained at 673 K for x = 0.06 as compared to the ZT of 0.8 in the undoped Zn4Sb3.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Limei Zhou, Wei Li, Jun Jiang, Ting Zhang, Yong Li, Gaojie Xu, Ping Cui,