| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1620343 | Journal of Alloys and Compounds | 2010 | 4 Pages |
Ga2O3 nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga2O3 thin films catalyzed with Mo. The influence of ammoniating time on microstructure, morphology and optical properties of GaN nanorods was analyzed in detail using the methods of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectrum. The results demonstrate that the nanorods are single crystal β-Ga2O3 with high-quality crystalline after annealing 20 min and these nanorods have the best crystalline with 200 nm in diameter. The growth direction of β-Ga2O3 nanorods is parallel to [1¯ 1 0] orientation. The optical properties of nanorods synthesized at 950 °C for 20 min are the best due to strong emission intensity. The luminescence mechanism can be explained by the presence of vacancy.
