| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1620456 | Journal of Alloys and Compounds | 2010 | 6 Pages |
Abstract
In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330Â K. The temperature dependent ideality factor behaviour at low temperature region (110-220Â K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30Â meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330Â K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
A. Sertap Kavasoglu, Fahrettin Yakuphanoglu, Nese Kavasoglu, Osman Pakma, Ozcan Birgi, Sener Oktik,