| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1620648 | Journal of Alloys and Compounds | 2009 | 4 Pages |
Abstract
Polycrystalline TiO2 thin films were formed on Pt(1 1 1)/Ti/SiO2/Si by thermal oxidation of Ti films with temperatures ranging from 600 °C to 800 °C. Results of Raman spectra testing indicate that the structure of the oxidized TiO2 films is rutile phase. The resistance switching behaviors (RSB) have been confirmed in Pt/TiO2/Pt structures. A stable RSB with a narrow dispersion of the resistance states and switching voltages was observed in the sample fabricated with the oxidation temperature of 600 °C. The resistance ratios of high resistance states to low resistance states are larger than 103 with the set and reset voltage as low as 2.5 V and 0.6 V, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Xun Cao, Xiaomin Li, Weidong Yu, Yiwen Zhang, Rui Yang, Xinjun Liu, Jingfang Kong, Wenzhong Shen,