Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1620759 | Journal of Alloys and Compounds | 2010 | 4 Pages |
Two-side deposition approach was applied to prepare Si-enriched FeSi alloys from 3% Si starting sheets with 0.35 mm thickness. FeSi layer was first deposited by direct current (DC) magnetron sputtering on the alloy, which was then subjected to vacuum annealing. It is found that reduction of the deposited FeSi layer thickness suppresses evaporation of Si during the annealing process, which is of great significance in enhancing efficiency of Si penetration into the low-Si starting alloy. After the Si-enriched process, the alloys demonstrate dense and uniform microstructure with 6.5% Si and exhibit α-Fe(Si) bcc structure revealed by X-ray diffractometer (XRD) and transmission electron microscope (TEM). Iron losses of the PVD-prepared Fe–6.5% Si alloy are as low as those of the alloys fabricated by CVD.