Laser chemical vapor deposition of SiC films with CO2 laser

SiC films were prepared by laser chemical vapor deposition using a CO2 laser (maximum laser power: 245 W) with HMDS (hexamethyldisilane) precursor and the effects of deposition conditions on the phase, microstructure and deposition rate were investigated. At pre-heating temperature of 323 K and laser power (PL) above 119 W (deposition temperature (Tdep) above 1410 K), (1 1 1)-oriented 3C SiC (β-SiC) films were obtained. With increasing Tdep, the microstructure of these SiC films changed from glass-like (Tdep < 1460 K) to cauliflower-like (Tdep = 1460–1560 K) to granular (Tdep > 1560 K). Conical facets formed on the surface of granular SiC films at around Tdep = 1650 K. The deposition rate (Rdep) of SiC films showed a maximum at Tpre = 473 K and PL = 119 W (Tdep = 1490 K) and reached 2200 μm h−1.