Synthesis and characterization of new quaternary MoBiInSe5 mixed metal chalcogenide thin films

Uniform mixed quaternary metal chalcogenide thin films of MoBiInSe5 have been successfully deposited on microglass slides substrate support using simple arrested precipitation technique (APT). The precursors used were molybdenum, bismuth, indium, triethanolamine in complex form and sodium selenosulphite as a source of Mo4+, Bi3+, In3+ and Se2− along with organic additives, respectively. The compositional analysis and morphology of the as deposited thin films were studied using energy dispersive X-ray analysis (EDAX), X-ray diffraction (XRD) and scanning electron microscope (SEM). The effect of preparative parameters such as concentration of precursors, complexing agent, PH, temperature, rate of agitation on morphology of the as deposited thin films was studied. The chemical composition was found to be stoichiometric. Morphological studies show that, refinement of grain size was strongly influenced by preparative parameters. In the present investigation we have described growth kinetics of MoBiInSe5 chalcogenide thin films using arrested precipitation technique (APT). The compositional and morphological results of as deposited MoBiInSe5 thin films showed the possibility of this material as best candidate for broadband photo convertor. DC electrical conductivity and TEP study shows that the material is n-type semiconductor.