Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1621026 | Journal of Alloys and Compounds | 2009 | 5 Pages |
Abstract
Nickel nitride layers have been synthesized by using microwave plasma-assisted reactive sputtering. In the Ar–N2 mixture used for the deposition, the Ar partial pressure was kept constant (0.015 Pa) and the N2 pressure p(N2) was chosen between 0.014 and 0.045 Pa. The reactive sputtering assisted by microwave multidipolar plasma appears to be a powerful technique for tailoring the stoichiometry of transition metal nitrides. Physical measurements performed on a stoichiometric nickel nitride Ni3N film deposited prove the non-ferromagnetic behavior of this compound.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
D. Vempaire, S. Miraglia, J. Pelletier, D. Fruchart, E.K. Hlil, L. Ortega, A. Sulpice, F. Fettar,