Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics

This work elucidates the properties of Al/HfO2/GaN metal-oxide-semiconductor capacitors using reactively sputtered HfO2 as a gate dielectric. The influence of GaN surface treatments and the post-annealing of HfO2 films on the leakage current, flat-band voltage, interface trap densities, dielectric constants, and effective oxide charges of the GaN MOS capacitors are presented. The Ga oxynitride on the surface of GaN was effectively removed by chemical solutions that also slightly reduced the dielectric constant, slightly increased the flat-band voltage, eliminated the hysteresis of the capacitance–voltage measurement, and yielded a similar leakage to that without surface treatment. A highest dielectric constant of HfO2 (17) was obtained when the sample was annealed at 600 °C for 20 min, while the lowest interface trap density (5.3 × 1011 cm−2) was obtained when the sample was annealed at 800 °C for 40 min. The leakage mechanism was well fitted by the Schottky emission and Frenkel–Poole emission models at a lower and higher electric field.