Lattice, magnetic and electronic transport behaviors of Ge-doped Mn3XC (X = Al, Zn, Ga)

The lattice, magnetic, and electronic transport properties of Mn3X1−yGeyC (X = Al, Zn, and Ga; y = 0, 0.5) were investigated. Ge-doping does not change the antiperovskite structure, and only decreases the lattice constant in different degree. For all Mn3X1−yGeyC, Ge-doping makes the magnetic transition temperature decrease. The total behavior of Mn3AlxGe1−xC in temperature dependence of resistivity is metallic. For Mn3GaxGe1−xC, since the carrier densities in the ferromagnetic phase and antiferromagnetic one are different, with decreasing the temperature, the resistivity appears an abrupt increase.