Influence of hydrogen doping on the electrical resistivity of partially crystalline Zr76Ni24 metallic glass

The electrical resistivity of hydrogen doped partially crystalline (Zr76Ni24)1−xHx metallic glasses has been measured in the temperature range from 1.5 up to 290 K for various dopant concentrations (x = 0, 0.018, 0.024, 0.043, 0.054). The effect of disorder on the electrical resistivity in the partially crystalline Zr76Ni24 metallic glass has been studied. The partially crystalline Zr76Ni24 metallic glass has a high room-temperature resistivity (136 μΩ cm) and becomes superconducting below 3.49 K. The temperature coefficient of the electrical resistivity, (TCR), in the hydrogen doped partially crystalline Zr76Ni24 samples, shows a nonmonotonic behavior. Doping the samples with hydrogen increases disorder and produces a small positive anomaly in the resistivity below about 100 K leading to a maximum in the resistivity before curve resumes a monotonic decrease with increasing temperature. The temperature dependence of the electrical resistivity has been described by using theoretical models of weak-localization, electron-electron interaction and electron-phonon scattering in disordered three-dimensional conductors. In the partially crystalline Zr76Ni24 metallic glass, hydrogen reduces the electronic density of states at the Fermi level, N(EF), leading to a decrease in conductivity and suppression of the superconducting transition temperature, Tc, for hydrogen level up to x = 0.043 whereas for x = 0.054, the Tc and N(EF) are enhanced.