Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1621592 | Journal of Alloys and Compounds | 2009 | 7 Pages |
Abstract
n-Type indium antimonide (n-InSb) films were successfully fabricated on p-GaAs monocrystalline substrates by flash evaporation technique. The elemental composition of the prepared films was confirmed by energy dispersive X-ray (EDX) spectroscopy. The morphology and crystal structure of the film were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The Gaussian distribution model was used to analyze the anomalies observed in current-voltage characteristics of n-InSb/p-GaAs heterojunctions. The barrier height obtained from C-V measurement is higher than obtained from I-V measurement and this discrepancy can be explained by introducing a spatial distribution of barrier heights due to barrier height inhomogeneities.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
A.A.M. Farag, F.S. Terra, G.M. Mahmoud, A.M. Mansour,