Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1621763 | Journal of Alloys and Compounds | 2009 | 5 Pages |
Abstract
Cobalt (Co) doped AZO (2Â at.% Al doped ZnO) thin films were synthesized by sol-gel technique. The films were found to have polycrystalline wurtzite structure of ZnO. The structural, morphological and transport properties of the films were investigated and found to be strongly composition dependent. Grain size and room temperature resistivity of the films were found to decrease with increase of Co content in the AZO films from 1 to 3Â at.%. Beyond 3Â at.% these parameters were found increasing. The electrical resistivity of the films was measured down to temperature of 100Â K. The carrier transport mechanisms have been explained on the basis of thermionic emission and variable range hopping.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
S.K. Neogi, R. Ghosh, G.K. Paul, S.K. Bera, S. Bandyopadhyay,