| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1623098 | Journal of Alloys and Compounds | 2009 | 5 Pages |
Abstract
Undoped and Al doped ZnO thin films were prepared on glass substrate by sol-gel dip coating from PVP-modified zinc acetate dihydrate and aluminium chloride hexahydrate solutions. The XRD patterns of all thin films indexed a highly preferential orientation along c-axis. The AFM images showed the average grain size of undoped ZnO thin film was about 101Â nm whereas the smallest average grain size at 8Â mol% Al was about 49Â nm. The values of direct optical band gap of thin films varied in the range of 3.70-3.87Â eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
T. Ratana, P. Amornpitoksuk, T. Ratana, S. Suwanboon,