Study on growth and characterization of ScAlMgO4 substrate crystal

Lattice-matched ScAlMgO4 substrate crystal for GaN and ZnO epitaxy has been grown by the Czochralski method. Polarizing microscopy observation and transmission spectrum indicate that the as-grown crystal is of good crystallization quality. The full width at half maximum (FWHM) value is 42.64 arc s. The absorption peak centered at 196 nm is caused by electronic transition from valence band to conduction band. Based on the investigations of sub-grain boundaries and cracking, the methods for reducing them are proposed.