Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1623654 | Journal of Alloys and Compounds | 2009 | 4 Pages |
Abstract
The compound with composition PdSnTe was prepared by heating of stoichiometric amount of Pd, Sn and Te in silica glass tube at 400 °C. Its crystal structure was refined by Rietveld method using conventional X-ray powder diffraction data. PdSnTe shows orthorhombic symmetry, space group Pbca with unit cell parameters a = 6.5687(2), b = 6.6028(2), c = 12.8849(4) Å, V = 558.8(1) Å3 and Z = 8. The title compound can be viewed as a ternary-ordered variant of α-NiAs2-type structure, it is isostructural with PtSiTe. Temperature dependence of electrical conductivity and Hall coefficient are presented, it suggests semimetallic or strongly degenerated semiconductor behaviour of the prepared compound.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
F. Laufek, A. Vymazalová, J. Navrátil, M. Drábek, J. Plášil, T. Plecháček,