| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1624134 | Journal of Alloys and Compounds | 2009 | 4 Pages |
Abstract
Ferroelectric Bi3.5Sm0.5Ti3O12 (BST) thin film has been grown on n-type Si (1 0 0) substrate by chemical solution deposition and spin coating technique. X-ray diffraction and atomic force microscope analyses confirmed that the film crystallized well at 700 °C. Metal-ferroelectric-semiconductor (MFS) configuration has been fabricated using BST as ferroelectric layer. The electrical measurements were conducted in MFS capacitor. The current-voltage characteristic displayed good insulating properties. Apparent counterclockwise hysteresis of capacitance-voltage curve for this film as the ferroelectric hysteresis was observed. The measurements of dielectric constant and dissipation factor as a function of frequency exhibited excellent dielectric properties. The MFS structure can be valuable for ferroelectric-gate field effect transistor.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
C.H. Yang, S.D. Wang, D.M. Yang,