Article ID Journal Published Year Pages File Type
1624305 Journal of Alloys and Compounds 2008 7 Pages PDF
Abstract

Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 °C for 2 h in an argon flow rate of 2 L/min by a vapor–liquid–solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower.

Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
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