| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1624582 | Journal of Alloys and Compounds | 2008 | 4 Pages |
Abstract
A particular dislocation etch pits distribution was found in Tm:YAP crystal grown along b axis through chemical etching technique. It shows that there are areas with different dislocation etch pits densities on the (0 1 0) plane. The cause of this distribution is not core, but the function of stress distribution during crystal growth. The effect of dislocation distribution on the spectral properties was studied, the results indicate that the area with low dislocation etch pits concentration has better fluorescence performance.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Yang Yang, Yanling Lu, Jun Wang, Yongbing Dai, Baode Sun,