Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1625376 | Journal of Alloys and Compounds | 2008 | 4 Pages |
Abstract
Reactive deposition epitaxy is used for the growth of semiconducting β-FeSi2 particles on Si(0 0 1) substrate. Iron layers of thickness 6 nm were deposited on Si substrates at 600 °C, followed by in situ annealing at 600 °C for 10, 20 and 30 min. The coexistence of the equilibrium α-FeSi2, β-FeSi2 phases and the metastable γ-FeSi2 phase is revealed through transmission electron microscopy (TEM) analysis, whereas the evolution of the semiconducting β-FeSi2 phase with annealing time is investigated with infrared transmittance measurements.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
N. Vouroutzis, T.T. Zorba, C.A. Dimitriadis, K.M. Paraskevopoulos, L. Dózsa, G. Molnár,