Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

Copper selenide (CuSe) thin films are grown onto amorphous glass substrate from an aqueous alkaline medium using solution growth technique (SGT) at room temperature. The preparative parameters were optimized to obtain good quality of thin films. The as-deposited films were characterized for physical, optical and electrical properties. X-ray diffraction (XRD) pattern reveals that the films are polycrystalline in nature. Energy dispersive analysis by X-ray (EDAX) shows formation of stoichiometric CuSe compound. Uniform deposition of CuSe thin films on glass substrate was observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM) micrographs. Average grain size was determined to 144.53 ± 10 nm using atomic force microscopy. The band gap was found to be 2.03 eV with direct band-to-band transition. Semi-conducting behaviour was observed from resistivity measurements. Ohmic behaviour was seen from I–V curve with good electrical conductivity.