Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1625490 | Journal of Alloys and Compounds | 2008 | 5 Pages |
Abstract
Influences of fabrication processes on electrochemical properties of Si thin film electrodes were investigated by utilizing a Ni buffer layer and annealing the fabricated films. Electrochemical properties of four Si film electrodes (Si/Cu, annealed Si/Cu, Si/Ni/Cu and annealed Si/Ni/Cu) fabricated with different processes were evaluated. Si electrode films fabricated on Cu substrate and Ni film were amorphous and their structures are still maintained after annealing. Fine Ni clusters with a trigonal shape were observed in the Ni/Cu film and coalesced after annealing. The highest capacity efficiency can be obtained from the Li/Si cell with the annealed Si/Ni/Cu film. The insertion of the Ni film as a buffer film and the post-annealing enhanced adhesion between Si film and Cu substrate.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Gyu-bong Cho, Bong-ki Lee, Won-chul Sin, Kwon-koo Cho, Ki-won Kim, Hyo-jun Ahn,