Ti-doped copper nitride films deposited by cylindrical magnetron sputtering

Pure and Ti-doped copper nitride films were prepared by cylindrical magnetron sputtering on glass substrates at room temperature. The preferred orientation for copper nitride films changes from [1 1 1] for undoped film to [1 0 0] for Ti-doped films. The variation of surface morphology correlates to that of preferred orientation resulting from the variation of Ti-doped content. The electrical resistivity and optical band gap increases as the Ti-doped content increases.