| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1626851 | Journal of Alloys and Compounds | 2006 | 5 Pages |
Abstract
The role of the donor impurity band in the conduction of highly doped and compensated intermetallic semiconductors with MgAgAs type of structure was investigated. A simulation of the electronic structure for TiCo1−xNixSb semiconducting solid solution was carried out. A scheme of the impurity band transformation in TiCoSb semiconductor due to donor impurities doping was advanced. A conduction transition from activated to metallic type when the TiCo1−xNixSb solid solution composition changes was observed. This conduction transition is associated with the Anderson-type transition.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Yu. Stadnyk, V.A. Romaka, M. Shelyapina, Yu. Gorelenko, L. Romaka, D. Fruchart, A. Tkachuk, V. Chekurin,