Phase diagram of the CdGa2Se4−Bi2Se3 system and growth of CdGa2Se4 single crystals

The phase diagram of the CdGa2Se4−Bi2Se3 system was investigated using phase X-ray diffraction, differential-thermal analysis and metallography. The system is of the eutectic type, and the coordinates of the eutectic point are ∼86 mol.% Bi2Se3 and 929 K. The CdGa2Se4 crystals were grown by the solution-melt method. An optimum solvent concentration of 45 mol.% was selected according to the constructed phase diagram. The grown crystals were orange, with an energy gap of 2.35 eV as estimated from the absorption edge.