Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1630745 | Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material | 2006 | 5 Pages |
Abstract
Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of CSi and NSi bonds. The SiCN bonds were observed in the deconvolved C 1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Xueming Li, Size Yang, Xingfang Wu,